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ILD621GB Datasheet - Infineon Technologies

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Part Name
ILD621GB

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4 Pages

File Size
60.2 kB

MFG CO.
Infineon
Infineon Technologies Infineon

DESCRIPTION
The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC.


FEATURES
• Alternate Source to TLP621-2/-4 and TLP621GB-2/-4
• Current Transfer Ratio (CTR) at IF= 5 mA
    ILD/Q621: 50% Min.
    ILD/Q621GB: 100% Min.
• Saturated Current Transfer Ratio (CTRSAT) at IF=1 mA
    ILD/Q621: 60% Typ.
    ILD/Q621GB: 30% Min.
• High Collector-Emitter Voltage, BVCEO=70 V
• Dual and Quad Packages Feature:
    - Reduced Board Space
    - Lower Pin and Parts Count
    - Better Channel to Channel CTR Match
    - Improved Common Mode Rejection
• Field-Effect Stable by TRIOS (TRansparent IOn Shield)
• Isolation Test Voltage from Double Molded Package, 5300 VACRMS
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1

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