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IKW40N65WR5 Datasheet - Infineon Technologies

IKW40N65WR5 image

Part Name
IKW40N65WR5

Other PDF
  2015_03   2015_12  

PDF
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page
16 Pages

File Size
1.6 MB

MFG CO.
Infineon
Infineon Technologies Infineon

Features
• VCE = 650 V
• IC = 40 A
• Powerful monolithic diode optimized for ZCS applications
• High ruggedness, temperature stable behavior
• Very low VCEsat and low Eoff
• Easy paralleling capability due to positive temperature coefficient in VCEsat
• Low EMI
• Low electrical parameters depending (dependence) on temperature
• Qualified according to JESD-022 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: //www.infineon.com/igbt/

Potential applications
• Welding
• PFC
• ZCS - converters


Part Name
Description
PDF
MFG CO.
Reverse-Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse-Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2013 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies

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