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IKA15N65ET6(2017) Datasheet - Infineon Technologies

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Part Name
IKA15N65ET6

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16 Pages

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1.7 MB

MFG CO.
Infineon
Infineon Technologies Infineon

Features and Benefits:
• Very low VCE(sat) 1.5V (typ.)
• Maximum junction temperature 175°C
• Short circuit with stand time 3µs
Trench and field-stop technology for 650V applications offers:
   • very tight parameter distribution
   • high ruggedness, temperature stable behavior
   • low VCEsat and positive temperature coefficient
• Low gate charge QG
• Pb-free lead plating; RoHS compliant
• Very soft, fast recovery anti-parallel Rapid diode
• Complete product spectrum and PSpice Models:
   //www.infineon.com/igbt/

Potential Applications:
Drives
   • GPD (general purpose drives)
Major home appliances
   • Air conditioning
   • Other major home appliances
Small home appliances
   • Other small home appliances


Part Name
Description
PDF
MFG CO.
IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode ( Rev : 2017 )
Infineon Technologies
IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode ( Rev : 2017 )
Infineon Technologies
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
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IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode ( Rev : 2010 )
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High speed Duopack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode ( Rev : 2008 )
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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode ( Rev : 2002 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode ( Rev : 2008 )
Infineon Technologies
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode ( Rev : 2008 )
Infineon Technologies
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode ( Rev : 2010 )
Infineon Technologies

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