ThinQ!™ Generation 5 represents Infneon’s leading edge technology for SiC Schottky Barrier diodes. The Infneon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efciency over all load conditions, coming from both the improved thermal characteristics and a lower fgure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

FEATUREs
■ Vbr at 650V
■ Improved Figure of Merit (Qc x Vf)
■ No reverse recovery charge
■ Soft switching reverse
   recovery waveform
■ Temperature independent
   switching behavior
■ High operating temperature
   (Tj max 175°C)
■ Improved surge capability
■ Pb-free lead plating
■ 10 years manufacturing of SiC diodes

Benefts
■ Higher safety margin against
   Overvoltage; best match with
   CoolMOS™ 650V products
■ Improved efciency over all
   load conditions
■ Increased efciency compared to
   Silicon Diode alternatives
■ Reduced EMI compared to snappier
   Silicon diode reverse recovery
   waveform
■ Highly stable switching performance
■ Reduced cooling requirements
■ Reduced risks of thermal runaway
■ RoHS compliant
■ High quality know-how and capacity
   in SiC diode manufacture

APPLICATIONs
■ Telecom/Server SMPS
■ Solar/UPS
■ PC Silverbox
■ LED/LCD TV
■ Motor Drives
■ HID lighting