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HN58S256AT-15 Datasheet - Hitachi -> Renesas Electronics

HN58S256A image

Part Name
HN58S256AT-15

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page
17 Pages

File Size
77.2 kB

MFG CO.
Hitachi
Hitachi -> Renesas Electronics Hitachi

Description
The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 64-byte page programming function to make the write operations faster.


FEATUREs
• Single supply: 2.2 to 3.6 V
• Access time: 150 ns (max)/200 ns (max)
• Power dissipation:
    - Active: 10 mW/MHz, (typ)
    - Standby: 36 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 15 ms (max)
• Automatic page write (64 bytes): 15 ms (max)
• Data polling and Toggle bit
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• Industrial versions (Temperatur range:–40 to 85˚C) are also available.

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Part Name
Description
PDF
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Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) ( Rev : 2013 )
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64 k EEPROM (8-kword × 8-bit) Ready/Busy function
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Two-wire serial interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit)
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Two-wire serial interface 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit)
Renesas Electronics
Memory FRAM CMOS 256 K (32 K × 8) Bit SPI
Fujitsu
Two-wire serial interface 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM(8-kword × 8-bit)
Hitachi -> Renesas Electronics

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