Description
The Hitachi HN29V25611AT-50H Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are controlled by simple external commands.
FEATUREs
• On-board single power supply (VCC): VCC = 2.7 V to 3.6 V
• Organization
– AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)
– Data register: (2048 + 64) bytes
• Multi-level memory cell
– 2 bit/per memory cell
• Automatic programming
– Sector program time: 1.0 ms (typ)
– System bus free
– Address, data latch function
– Internal automatic program verify function
– Status data polling function
• Automatic erase
– Single sector erase time: 1.0 ms (typ)
– System bus free
– Internal automatic erase verify function
– Status data polling function
• Erase mode
– Single sector erase ((2048 + 64) byte unit)
• Fast serial read access time:
– First access time: 50 µs (max)
– Serial access time: 50 ns (max)
• Low power dissipation:
– ICC1 = 2 mA (typ) (Read)
– ICC2 = 20 mA (max) (Read)
– ISB2 = 50 µA (max) (Standby)
– ICC3/ICC4 = 40 mA (max) (Erase/Program)
– ISB3 = 20 µA (max) (Deep standby)
• The following architecture is required for data reliability.
– Error correction: more than 3-bit error correction per each sector read
– Spare sectors: 1.8% (290 sectors) (min) within usable sectors