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HM6264BI Datasheet - Hitachi -> Renesas Electronics

HM6264BI image

Part Name
HM6264BI

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17 Pages

File Size
61.4 kB

MFG CO.
Hitachi
Hitachi -> Renesas Electronics Hitachi

Description
The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, is available for high density mounting.


FEATUREs
• Single 5 V supply: 5 V ± 10%
• Access time: 100/120 ns (max)
• Power dissipation:
   Standby: 10 µW (typ)
   Operation: 15 mW (typ) (f = 1 MHz)
• Completely static memory
   No clock or timing strobe required
• Equal access and cycle times
• Common data input and output
   Three state output
• Directly TTL compatible
   All inputs and outputs
• Battery backup operation capability
• Operating temperature range: –40˚C to +85˚C

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
Wide Temperature Range Version 4M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
Wide Temperature Range Version 4M SRAM (512-kword × 8-bit)
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Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
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Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)
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64k EEPROM (8-kword × 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version
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Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit)
Hitachi -> Renesas Electronics
Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit)
Renesas Electronics
Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)
Renesas Electronics

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