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HM6216255HC Datasheet - Hitachi -> Renesas Electronics

HM6216255HC image

Part Name
HM6216255HC

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17 Pages

File Size
84.6 kB

MFG CO.
Hitachi
Hitachi -> Renesas Electronics Hitachi

Description
The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.


FEATUREs
• Single 5.0 Vsupply : 5.0 V ± 10 %
• Access time: 10 ns (max)
• Completely static memory
    - No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
    - All inputs and outputs
• Operating current: 170 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version)
• Data retansion current: 0.8 mA (max) (L-version)
• Data retantion voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
4M high Speed SRAM (256-kword × 16-bit)
Hitachi -> Renesas Electronics
4M high Speed SRAM (256-kword × 16-bit)
Hitachi -> Renesas Electronics
4M High Speed SRAM (256-kword × 16-bit)
Hitachi -> Renesas Electronics
4M High Speed SRAM (256-kword × 16-bit)
Hitachi -> Renesas Electronics
4M high speed SRAM (256-kword x 16-bit), 12ns access time
Hitachi -> Renesas Electronics
4M High Speed SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4M High Speed SRAM (512-kword × 8-bit)
Renesas Electronics
4M High Speed SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4M High Speed SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4M High Speed SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics

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