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HL8333G Datasheet - Opnext. Inc.

HL8333G image

Part Name
HL8333G

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page
4 Pages

File Size
90.1 kB

MFG CO.
OPNEXT
Opnext. Inc. OPNEXT

Description
The HL8333G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment.


FEATUREs
• Infrared light output: λp = 820 to 840 nm
• High power:
   standard continuous operation at 40 mW (CW),
   pulsed operation at 50 mW
• Built-in monitor photodiode
• Single longitudinal mode


Part Name
Description
PDF
MFG CO.
GaAlAs Laser Diode
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GaAlAs Laser Diode
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GaAlAs Laser Diode
Hitachi -> Renesas Electronics
GaAlAs Laser Diode
Opnext. Inc.
GaAlAs Laser Diode
Hitachi -> Renesas Electronics

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