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H7N0308AB Datasheet - Renesas Electronics

H7N0308AB image

Part Name
H7N0308AB

Description
Silicon N Channel MOS FET High Speed Power Switching

Other PDF
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page
7 Pages

File Size
75 kB

MFG CO.
Renesas
Renesas Electronics Renesas

Silicon N Channel MOS FET High Speed Power Switching


FEATUREs
•  Low on-resistance
   RDS (on)= 3.8 mΩ typ.
•  Low drive current
•  4.5 V gate drive device can be driven from 5 V source

Page Link's: 1  2  3  4  5  6  7 

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