H6968CS Datasheet - Hi-Sincerity Mocroelectronics
Part Name
H6968CS
Other PDF
no available.
PDF
page
4 Pages
File Size
42.3 kB
MFG CO.
Hi-Sincerity Mocroelectronics
Features
• RDS(on)=32mΩ@VGS=2.5V, ID=5.5A
• RDS(on)=24mΩ@VGS=4.5V, ID=6.5A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Li ion Battery Packs Use
• Designed for Battery Switch Appliactions
• ESD Protected
Part Name
Description
PDF
MFG CO.
Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected)
Hi-Sincerity Mocroelectronics
6.5A 20V Dual Die N-Channel ESD Protected Enhancement-Mode MOSFET
First Components International
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
PANJIT INTERNATIONAL
Share Link: