H4422S Datasheet - Hi-Sincerity Mocroelectronics
Part Name
H4422S
Description
Other PDF
no available.
PDF
page
5 Pages
File Size
139.7 kB
MFG CO.
Hi-Sincerity Mocroelectronics
Features
• RDS(on)=13.5mΩ@VGS=10V, ID=11A
• RDS(on)=24mΩ@VGS=4.5V, ID=5A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
Part Name
Description
PDF
MFG CO.
30V N-Channel Enhancement Mode MOSFET
Shanghai Leiditech Electronic Technology Co., Ltd
30V N-Channel Enhancement Mode MOSFET
Shanghai Leiditech Electronic Technology Co., Ltd
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