Features
• RDS(on)=16mΩ@VGS=10V, ID=20A
• RDS(on)=25mΩ@VGS=4.5V, ID=20A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM