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H15R1202 Datasheet - Infineon Technologies

H15R1202 image

Part Name
H15R1202

Other PDF
  2008  

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page
12 Pages

File Size
359.3 kB

MFG CO.
Infineon
Infineon Technologies Infineon

Reverse Conducting IGBT with monolithic body diode


FEATUREs:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
   - very tight parameter distribution
   - high ruggedness, temperature stable behavior
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/


APPLICATIONs:
• Inductive Cooking
• Soft Switching Applications

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
Reverse-Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse-Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2015_03 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2013 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies

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