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GT8G136 Datasheet - Toshiba

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Part Name
GT8G136

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6 Pages

File Size
201.7 kB

MFG CO.
Toshiba
Toshiba Toshiba

Strobe Flash Applications

•  Compact and Thin (TSSOP-8) package
•  Enhancement-mode
•  Peak collector current: IC= 150 A (max)
                               (@VGE=3.0V(min),Ta=70℃(max))/

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Part Name
Description
PDF
MFG CO.
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : V2 )
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
Toshiba

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