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GS880F18T Datasheet - Giga Semiconductor

GS880F18T image

Part Name
GS880F18T

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page
25 Pages

File Size
281 kB

MFG CO.
GSI
Giga Semiconductor GSI

Functional Description
Applications
The GS880F18/32/36T is a 9,437,184 bit (8,388,608 bit for x32 version) high performance synchronous SRAM with a 2 bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPU’s, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support


FEATUREs
• Flow through mode operation.
• 3.3V +10%/-5% Core power supply.
• 2.5V or 3.3V I/O supply.
• LBO pin for linear or interleaved burst mode.
• Internal input resistors on mode pins allow floating mode pins. Default to Interleaved Pipelined Mode.
• Byte write (BW) and/or global write (GW) operation.
• Common data inputs and data outputs.
• Clock Control, registered, address, data, and control.
• Internal Self-Timed Write cycle.
• Automatic power-down for portable applications.
• 100-lead TQFP package

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Part Name
Description
PDF
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512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs
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512K x 18, 256K x 36 ByteSafe™ 8Mb Sync Burst SRAMs
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Giga Semiconductor
512K x 18, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor

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