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GS832272C Datasheet - Giga Semiconductor

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Part Name
GS832272C

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41 Pages

File Size
888.4 kB

MFG CO.
GSI
Giga Semiconductor GSI

Functional Description
Applications
The GS832218/36/72 is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.


FEATUREs
• FT pin for user-configurable flow through or pipeline operation
• Single/Dual Cycle Deselect selectable
• IEEE 1149.1 JTAG-compatible Boundary Scan
• ZQ mode pin for user-selectable high/low output drive
• 2.5 V +10%/–10% core power supply
• 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 119-, 165-, and 209-bump BGA package

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Part Name
Description
PDF
MFG CO.
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs
Giga Semiconductor
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
Giga Semiconductor

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