DESCRIPTION
Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters along with ceramic glass, which provides mechanical strength to the diode. These devices are designed with a narrow base width, a high quality intrinsic ‘I’ layer that provides low loss, high isolation and ultra high speed switching characteristics.

KEY FEATURES
Wide Bandwidth / High Switching Speed
5 Gram Typical Pull Strength
Very Low RS/CJ (Loss/Isolation) Products with Low Inductance
High Quality, High Resistivity Epitaxy
Stable Low Leakage Passivation with Rugged Glass Body
RoHS Compliant 1

APPLICATIONS/BENEFITS
High Speed Switching
Broadband Performance
Suitable for Applications through 26 Ghz