Features
• 175°C Maximum Operating Temperature
• Gate Oxide free SiC switch
• Exceptional Safe Operating Area
• Integrated SiC Schottky Rectifier
• Excellent Gain Linearity
• Temperature Independent Switching Performance
• Low output capacitance
• Positive temperature co-efficient of RDS,ON
• Suitable for connecting an anti-parallel diode

Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs
• > 20 µs Short-Circuit Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal distortion
• High Amplifier Bandwidth
• Reduced cooling requirements
• Reduced system size

APPLICATIONs
• Down Hole Oil Drilling, Geothermal Instrumentation
• Hybrid Electric Vehicles (HEV)
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
• Induction Heating
• Uninterruptible Power Supply (UPS)
• Motor Drives