FZT689B(1995) Datasheet - Diodes Incorporated.
Part Name
FZT689B
Other PDF
PDF
page
2 Pages
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80.1 kB
MFG CO.
Diodes Incorporated.
FEATURES
* Gain of 400 at IC=2 Amps and low saturation voltage
* Extremely low equivalent on-resistance; RCE(sat) 92mΩ at 3A
APPLICATIONS
* Darlington replacement
* Flash gun convertors and Battery powered circuits
Part Name
Description
PDF
MFG CO.
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 1995 )
Diodes Incorporated.
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 1995 )
Diodes Incorporated.
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 1998 )
Diodes Incorporated.
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 2001 )
Diodes Incorporated.
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 1997 )
Diodes Incorporated.
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