Description
   The FM25CL64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

FEATUREs
64K bit Ferroelectric Nonvolatile RAM
• Organized as 8,192 x 8 bits
• High Endurance 10 Trillion (1013) Read/Writes
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Fast Serial Peripheral Interface - SPI
• Up to 16 MHz Frequency
• Direct Hardware Replacement for EEPROM
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Sophisticated Write Protection Scheme
• Hardware Protection
• Software Protection

Low Power Consumption
• Low Voltage Operation 3.0-3.6V
• 6 μA Standby Current (+85°C)

Industry Standard Configuration
• Automotive Temperature -40°C to +125°C
   o Qualified to AEC Q100 Specification
• “Green”/RoHS 8-pin SOIC