Description
   The FM25040B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

FEATUREs
4K bit Ferroelectric Nonvolatile RAM
• Organized as 512 x 8 bits
• High Endurance 1 Trillion (1012) Read/Writes
• 38 year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI
• Up to 20 MHz maximum Bus Frequency
• Direct hardware replacement for EEPROM
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Sophisticated Write Protection Scheme
• Hardware Protection
• Software Protection

Low Power Consumption
• 250 µA Active Current (1 MHz)
• 4 µA (typ.) Standby Current

Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 8-pin “Green”/RoHS SOIC (-G)