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FM25040B(2013_02) Datasheet - Cypress Semiconductor

FM25040B image

Part Name
FM25040B

Other PDF
  2012   lastest PDF  

PDF
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page
14 Pages

File Size
368.4 kB

MFG CO.
Cypress
Cypress Semiconductor Cypress

Description
   The FM25040B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.


FEATUREs
4K bit Ferroelectric Nonvolatile RAM
• Organized as 512 x 8 bits
• High Endurance 10 Trillion (1013) Read/Writes
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Fast Serial Peripheral Interface - SPI
• Up to 14 MHz maximum Bus Frequency
• Direct hardware replacement for EEPROM
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Sophisticated Write Protection Scheme
• Hardware Protection
• Software Protection

Low Power Consumption
• 10 μA Standby Current (+85°C)

Industry Standard Configuration
• Automotive Temperature -40°C to +125°C
   o Qualified to AEC Q100 Specification
• “Green”/RoHS 8-pin SOIC


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