Description
The FM24C64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

FEATUREs
64K bit Ferroelectric Nonvolatile RAM
•  Organized as 8,192 x 8 bits
•  High Endurance 1 Trillion (10¹²) Read/Writes
•  38 Year Data Retention
•  NoDelay™ Writes
•  Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface
•  Up to 1 MHz maximum bus frequency
•  Direct hardware replacement for EEPROM
•  Supports legacy timing for 100 kHz & 400 kHz

Low Power Operation
•  5V operation
•  100 µA Active Current (100 kHz)
•  4 µA (typ.) Standby Current

Industry Standard Configuration
•  Industrial Temperature -40°C to +85°C
•  8-pin “Green”/RoHS SOIC (-G)