General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.

FEATUREs
· 100 A, 30 V RDS(ON) = 4.5 mW @ VGS = 10 V
                  RDS(ON) = 6.0 mW @ VGS = 4.5 V
· Critical DC electrical parameters specified at elevated temperature
· High performance trench technology for extremely low RDS(ON)
· 175°C maximum junction temperature rating