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FDFS2P103 Datasheet - Fairchild Semiconductor

FDFS2P103 image

Part Name
FDFS2P103

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9 Pages

File Size
281.2 kB

MFG CO.
Fairchild
Fairchild Semiconductor Fairchild

General Description
The FDFS2P103 combines the exceptional performance of Fairchilds PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.


FEATUREs
• –5.3 A, –30V RDS(ON) = 59 mΩ @ VGS = –10 V RDS(ON) = 92 mΩ @ VGS = –4.5 V
• VF < 0.52 V @ 1 A (TJ = 125°C) VF < 0.57 V @ 1 A (TJ = 25°C)
• Schottky and MOSFET incorporated into single power surface mount SO-8 package
• Electrically independent Schottky and MOSFET pinout for design flexibility

Page Link's: 1  2  3  4  5  6  7  8  9 

Part Name
Description
PDF
MFG CO.
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode ( Rev : 2005-04 )
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode ( Rev : 2007 )
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
ON Semiconductor

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