General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FEATUREs
• 50A, 30 V RDS(ON) = 8.8 mΩ @ VGS = 10 V RDS(ON) = 11.3 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching
• High performance trench technology for extremely low RDS(ON)

APPLICATIONs
• DC/DC converter
• Power management