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DS1220AB Datasheet - ETC

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Part Name
DS1220AB

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7 Pages

File Size
247 kB

MFG CO.
ETC
ETC ETC

[ArtsChip]

DESCRIPTION
The DS1220Y 16K Nonvolatile SRAM is a 16, 384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 2K x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM, allowing direst substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.


FEATURES
• 10 years minimum data retention in the absence of external power
• Data is automatically protected during power loss
• Directly replaces 2k x 8 volatile static RAM of EEPROM
• Unlimited write cycles
• Low-power CMOS
• JEDEC standard 24-pin DIP package
• Read and write access times as fast as 100ns
• Full ±10% operating range
• Optional industrial temperature range of -40 ℃ to +85℃, designated IND

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Part Name
Description
PDF
MFG CO.
16k Nonvolatile SRAM
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16k Nonvolatile SRAM
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16k Nonvolatile SRAM ( Rev : 2010 )
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16k Nonvolatile SRAM
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16k Nonvolatile SRAM
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NVRAM 16k Nonvolatile SRAM
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2048k Nonvolatile SRAM ( Rev : 2010 )
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8M Nonvolatile SRAM
Maxim Integrated
64k Nonvolatile SRAM
Dallas Semiconductor -> Maxim Integrated
4096k Nonvolatile SRAM
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