Features
• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low RDS(ON) - minimizes conduction losses
• Low VSD - reducing the losses due to body diode conduction
• Low Qrr - lower Qrr of the integrated Schottky reduces body
diode switching losses
• Low gate capacitance (Qg/Qgs) ratio – reduces risk of
shoot-through or cross conduction currents at high frequencies
• Avalanche rugged – IAR and EAR rated
• Lead Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability