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DG611EEN-T1-GE4(2017) Datasheet - Vishay Semiconductors

DG611EEQ-T1-GE4 image

Part Name
DG611EEN-T1-GE4

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18 Pages

File Size
405.6 kB

MFG CO.
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
   The DG611E, DG612E, and DG613E contain four independently selectable SPST switches. They offer improved performance over the industry standard DG611 series. The DG611E and DG612E have all switches normally closed and normally open respectively, while the DG613E has 2 normally open and 2 normally closed switches.


FEATURES
• Low charge injection (1.4 pC typ.)
• Leakage current < 0.25 nA at 85 °C
• Low switch capacitance (Csoff 3 pF typ.)
• Low RDS(on) - 115 Ω max.
• Fully specified with single supply operation at
   3 V, 5 V, and dual supplies at ± 5 V
• Low voltage, 2.5 V CMOS/TTL compatible
• 1 GHz, 3 dB bandwidth
• Excellent isolation performance (-59 dB at 10 MHz)
• Excellent crosstalk performance (-74 dB at 10 MHz)
• Fully specified from -40 °C to +85 °C and -40 °C to +125 °C
• 16 lead SOIC, TSSOP and miniQFN package
   (1.8 mm x 2.6 mm)
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912


APPLICATIONS
• Precision instrumentation
• Medical instrumentation
• Automated test equipment
• High speed communications applications
• High-end data acquisition
• Sample and hold applications
• Sample and hold systems


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