DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
• High DC Current Gain
: hFE= 1000(Min) @ IC= 10A, VCE= 3V
• Fast Switching Speed
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for low frequency power amplifier and high
current switching applications.