General Description [1]
The CY7C197BN is a high performance CMOS Asynchronous SRAM organized as 256 K × 1 bits that supports an asynchronous memory interface. The device features an automatic power down feature that significantly reduces power consumption when deselected.

FEATUREs
■ Fast access time: 15 ns
■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V)
■ CMOS for optimum speed and power
■ TTL compatible inputs and outputs
■ Available in 24-pin DIP and 24-pin SOJ