MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode

FEATUREs
• Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.
[MOSFET]
   • 1.8V drive.
[SBD]
   • Short reverse recovery time.
   • Low forward voltage.
   • Junction temperature 150°C guarantee.

APPLICATIONs
• DC / DC converters.