CPD82X Datasheet - Central Semiconductor
Part Name
CPD82X
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page
2 Pages
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395.2 kB
MFG CO.
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 14.6 x 14.6 MILS
Die Thickness 5.5 MILS
Anode Bonding pad Area 11.8 x 11.8 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
Part Name
Description
PDF
MFG CO.
Schottky Diode Silicon High Current Schottky Diode Chip ( Rev : 2006 )
Central Semiconductor
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