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CPD65 Datasheet - Central Semiconductor

CPD65 image

Part Name
CPD65

Description
Low Leakage Diode Picoampere Diode Chip

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page
2 Pages

File Size
207.5 kB

MFG CO.
Central-Semiconductor
Central Semiconductor Central-Semiconductor

PROCESS DETAILS
   Process EPITAXIAL PLANAR
   Die Size 9.5 X 9.5 MILS
   Die Thickness 7.5 MILS
   Anode Bonding Pad Area 2.5 MILS DIAMETER
   Top Side Metalization Al - 30,000Å
   Back Side Metalization Au - 13,000Å


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