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CPD63 Datasheet - Central Semiconductor

CPD63 image

Part Name
CPD63

Description
Switching Diode High Speed Switching Diode Chip

Other PDF
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page
2 Pages

File Size
203.7 kB

MFG CO.
Central-Semiconductor
Central Semiconductor Central-Semiconductor

PROCESS DETAILS
   Process EPITAXIAL PLANAR
   Die Size 11 x 11 MILS
   Die Thickness 11 MILS
   Anode Bonding pad Area 3.3 x 3.3 MILS
   Top Side Metalization Al - 30,000Å
   Back Side Metalization Au - 18,000Å


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