CPD05 Datasheet - Central Semiconductor
Part Name
CPD05
Other PDF
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page
2 Pages
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453.9 kB
MFG CO.
Central Semiconductor
PROCESS DETAILS
Process GLASS PASSIVATED MESA
Die Size 51 x 51 MILS
Die Thickness 10.2 MILS
Anode Bonding Pad Area 36 x 36 MILS
Top Side Metalization Ni/Au - 5,000Å/2,000Å
Back Side Metalization Ni/Au - 5,000Å/2,000Å
Part Name
Description
PDF
MFG CO.
General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip ( Rev : 2003 )
Central Semiconductor
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Jiangsu Yutai Electronics Co., Ltd
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