CP707 Datasheet - Central Semiconductor
Part Name
CP707
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PDF
page
2 Pages
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394.7 kB
MFG CO.
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 27 x 27 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 5.3 x 3.8 MILS
Emitter Bonding Pad Area 5.3 x 6.5 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
Part Name
Description
PDF
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