CP349 Datasheet - Central Semiconductor
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CP349
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MFG CO.
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 51 x 51 MILS
Die Thickness 9.1 MILS
Base Bonding Pad Area 7.9 x 15.7 MILS
Emitter Bonding Pad Area 7.9 x 15.7 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ti/Ni/Ag - 2000Å/3000Å/20000Å
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MFG CO.
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