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CEM4435A Datasheet - ETC

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Part Name
CEM4435A

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page
4 Pages

File Size
1.2 MB

MFG CO.
ETC
ETC ETC

[SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Description:
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=-30V,ID=-8A,RDS(ON)<20mΩ @VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

Page Link's: 1  2  3  4 
 

Part Name
Description
PDF
MFG CO.
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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