Description
The A59-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability.
This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network insures temperature-stable performance, in addition to an RF Choke, used for power supply decoupling.
Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.

FEATUREs
 • HIGH DYNAMIC RANGE: +117 DBM (1 MHz Band)
 • HIGH OUTPUT POWER: +22 dBm (TYP.)
 • HIGH THIRD ORDER I.P.: +36 dBM (TYP.)
 • WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS