DESCRIPTION
The NE68039 / 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. NE68039 / 2SC4095 features excellent power gain with very low-noise figures. NE68039 / 2SC4095 employs direct nitiride passivated base surface process (DNP process) which is a proprietary new fabrication technique which provides excellent noise figures at high current values. This allows excellent associated gain and very wide dynamic range.

FEATURES
• NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA
• |S21e|2 = 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA