General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

FEATUREs
◾ Very low on-state resistance 
◾ Q101 compliant
◾ 175 °C rated 
◾ Standard level compatible

APPLICATIONs
◾ Automotive systems 
◾ General purpose power switching
◾ Motors, lamps and solenoids 
◾ 12 V and 24 V loads