General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

FEATUREs and benefits
■ Easy power control
■ Integrated dual side ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (0.5 GHz to 1.4 GHz)
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

APPLICATIONs
■ Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range