datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
HOME  >>>  NXP Semiconductors.  >>> BLC8G27LS-180AV PDF

BLC8G27LS-180AV Datasheet - NXP Semiconductors.

BLC8G27LS-180AV image

Part Name
BLC8G27LS-180AV

Other PDF
  no available.

PDF
DOWNLOAD     

page
14 Pages

File Size
194.3 kB

MFG CO.
NXP
NXP Semiconductors. NXP

General description
180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.


FEATUREs and benefits
■ High efficiency
■ Excellent ruggedness
■ Designed for broadband operation
■ Low thermal resistance providing excellent thermal stability
■ Integrated ESD protection
■ Designed for low memory effects providing excellent pre-distortability
■ Lower output capacitance for improved performance in Doherty applications
■ Asymmetrical design to achieve optimal efficiency across the band
■ Decoupling leads to enable improved video bandwidth
■ Internally matched for ease of use (input and output)
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)


APPLICATIONs
■ RF power amplifier for W-CDMA base stations and multi carrier applications in the
   2496 MHz to 2690 MHz frequency range


Part Name
Description
View
MFG CO.
Power LDMOS transistor
PDF
NXP Semiconductors.
Power LDMOS transistor
PDF
NXP Semiconductors.
Power LDMOS transistor
PDF
NXP Semiconductors.
Power LDMOS transistor
PDF
Ampleon
Power LDMOS transistor ( Rev : 2012 )
PDF
NXP Semiconductors.
Power LDMOS transistor
PDF
NXP Semiconductors.
Power LDMOS transistor ( Rev : 2012 )
PDF
NXP Semiconductors.
Power LDMOS transistor
PDF
NXP Semiconductors.
Power LDMOS transistor
PDF
Ampleon
Power LDMOS transistor
PDF
NXP Semiconductors.

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]