BD676A Datasheet - New Jersey Semiconductor
Part Name
BD676A
Description
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MFG CO.
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage— : V(BR)CEo = -45 V
• DC Current Gain— : hFE = 750(Min)@lc=-2A
• Complement to Type BD675A
APPLICATIONS
• Designed for use as output devices in complementary general-purpose amplifier applications.
Part Name
Description
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MFG CO.
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