BD633 Datasheet - New Jersey Semiconductor
Part Name
BD633
Description
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PDF
page
2 Pages
File Size
79.1 kB
MFG CO.
New Jersey Semiconductor
DESCRIPTION
• DC Current Gain - : hFE = 40(Min.)@ IC= 25mA
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.)
• Complement to Type BD634
APPLICATIONS
• Designed for amplifier and switching applications.
Part Name
Description
PDF
MFG CO.
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