FEATURE
• Epitaxial Die Construction
• Two internal isolated NPN/PNP transistors in one package
• Power Dissipation
PCM : 0.2 W (Temp. = 25˚C)
• Collector Current
ICM : 0.1A
• Collector-base Voltage
V(BR)CBO : 50/-50 V
• Operating & Storage Junction Temperature
TJ, TSTG : -55˚C~+150˚C