DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= -100V(Min)
• High DC Current Gain-
   : hFE= 2000(Min)@ (VCE= -2V, IC= -3A)
• Low Collector Saturation Voltage
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

APPLICATIONS
• Designed for low-frequency power amplifiers and lowspeed switching applications.