POWER PhotoMOS RELAYS 1-channel (Form B) Type

FEATURES
1. High capacity
   A maximum 0.5A load can be controlled with a 5 mA input current. The ON resis
   tance is low at 2.8Ω (typ.)
2. 1 Form B
   This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.

3. Compact slim-type 4-pin SIL
   (W)3.5× (D)21.0× (H)12.5 mm (W).138×(D).827×(H).492 inch×
   The compact size of the 4-pin SIL package allows high density mounting.

TYPICAL APPLICATIONS
• Railroad, traffic signals
• Measurement instruments
• Testing equipment